Overcoming power efficiency limitation of white fluorescence light‐emitting diodes via multilevel‐hydrogen‐bond matrix

Light Extraction Efficiency Enhancement of Colloidal Quantum Dot LightEmitting Diodes Using LargeScale Nanopillar Arrays

Colloidal quantum dots (QDs) offer greatly advantageous features including high emission effi ciency, [ 1,2 ] narrow emission linewidth, [ 3,4 ] tunable emission wavelength, [ 5,6 ] and low-cost solution-processing, [ 7 ] making them one of the most promising materials for lighting-emitting diodes (LEDs). Recently, current-driven quantum dot lighting-emitting diodes (QLEDs) have been intensivel...

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes.

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented ...

Heteroepitaxial Growth of GaN on Unconventional Templates and LayerTransfer Techniques for LargeArea, Flexible/Stretchable LightEmitting Diodes

temperature. This wide spectral range enables potential applications from the infrared to the deep ultraviolet regions of the electromagnetic spectrum. This makes GaN-based nitrides one of the most important materials for light sources such as light-emitting diodes (LEDs). [ 1–5 ] Sapphire has long been used as a substrate for GaN-based LEDs, and silicon (Si) is becoming its strong competitor d...

WhIte noISe: overComIng overStImulAtIon

Linearly polarized emission from GaInN lightemitting diodes with polarization-enhancing reflector.

A polarization-enhancing reflector design, which is matched to the emission characteristics of GaInN/GaN 460 nm light-emitting diodes grown on (0001) oriented sapphire substrates, is reported. Side-emitted light from these devices is known to be highly polarized with the electric field in the plane of the active region. Through selective rotation of polarization by the reflector, the in-plane p...